Presentation Abstract:
Maturing the thin film growth of emerging materials to reduce the level of defects is a mandatory prerequisite to study their intrinsic physics and to innovate new device functionalities. Two classes of material systems, namely transition metal oxide and transition metal chalcogenide compounds offer a particularly rich palette of properties, hosting a wide range of different electronic ground states with sizeable coupling among various configurational degrees of freedom, namely, spin, charge, orbital, and lattice degree of freedom. This coupling can give rise to intriguing long-range phenomena and may result in the emergence of spontaneous electric polarization, magnetic order, and Cooper pair formation among others. Since these effects can occur within the same structural motif, such as in the perovskite structure of complex oxide materials allowing for epitaxial integration, as well as in layered chalcogenide materials that can be easily stacked due to the weak interlayer coupling, the combination of these different and sometimes mutually exclusive phenomena becomes possible at the atomic scale, thus enabling entirely new materials design strategies.
In this talk I will give an overview over thin film growth efforts by molecular beam epitaxy at Penn State and highlight, how some of the challenges towards a matured thin film synthesis have been recently overcome, resulting in artificially layered structures with high structural perfection.
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Zoom Invitation:
Topic: PACK Fellowship Seminar on May 19, 2020
Time: May 19, 2020 10:00 AM Eastern Time (US and Canada)
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